Hermetic interconnect structure and method of manufacture
AssigneeInnovative Micro Technology
InventorsGregory A. Carlson, Jeffery F. Summers
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Abstract
A hermetic interconnect is fabricated on a substrate by forming a stud of conductive material over a metallization layer, and then overcoating the stud of conductive material and the metallization layer with a layer of compliant dielectric material. In one embodiment, the layer of compliant dielectric material is low Young's modulus silicon dioxide, formed by sputter-deposition at low temperature, in a low pressure argon atmosphere. The interconnect may provide electrical access to a micromechanical device, which is enclosed with a capping wafer hermetically sealed to the substrate with an AuInx alloy bond.
Claims18
A hermetic interconnect formed on a substrate, comprising:
- a layer of metallization formed over the substrate;
- and
- a layer of compliant dielectric material formed over the layer of metallization,
- wherein the compliant dielectric material has a Young's modulus of less than about 20 GPa, and wherein the compliant dielectric material provides a hermetic seal, preventing the transmission of gases between at least two points, at least one of the two points being located within a hermetic cavity and the metallization providing electrical conductivity between the at least two points.
- wherein the compliant dielectric material consists essentially of silicon dioxide with about 12% by weight of argon.
A method for forming a hermetic interconnect on a substrate, comprising:
- (1) forming a metallization layer over the substrate;
- (2) forming a layer of compliant dielectric material over the metallization layer, wherein the compliant dielectric material has a Young's modulus of less than about 20GPa, and wherein the compliant dielectric material provides a hermetic sealpreventing the transmission of gases between at least two points, at least one of the two points being located within a hermetic cavity and the metallization layer providing electrical conductivity between the at least two points;
- wherein the compliant dielectric material consists essentially of silicon dioxide with about 12% by weight of argon.
Dependencies are inferred from the claim text.