Semiconductor device using MEMS technology
AssigneeKabushiki Kaisha Toshiba
InventorTatsuya Ohguro
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Abstract
A semiconductor device using a MEMS technology according to an example of the present invention comprises a cavity, a lower electrode positioned below the cavity, a moving part positioned in the cavity, an upper electrode coupled with the moving part, a film which covers an upper part of the cavity and has an opening, and a material which closes the opening and seals the cavity.
Claims20
A semiconductor device using a MEMS technology, the semiconductor device comprising:
- a cavity;
- a lower electrode positioned below the cavity;
- a moving part positioned in the cavity;
- an upper electrode coupled with the moving part;
- a first film which covers an upper portion of the cavity and has a first opening;
- a material which closes the first opening and seals the cavity;
- and
- a member positioned in the cavity and in substantially a same vertical level as the moving part and below the first film,
- wherein a second opening is provided between the member and the moving part and is configured to allow movement of the moving part as seen from above the cavity, and
- wherein a position of the first opening does not overlap with a position of the second opening.
A semiconductor device using a MEMS technology, the semiconductor device comprising:
- a cavity;
- a lower electrode positioned below the cavity;
- a moving part positioned in the cavity;
- an upper electrode coupled with the moving part;
- a first film which covers an upper portion of the cavity and has a first opening;
- a plurality of columns positioned inside the cavity and configured to support the first film, wherein the plurality of columns are arranged at a pitch not greater than 500 μm;
- and
- a member positioned in the cavity and in substantially a same vertical level as the moving part and below the first film,
- wherein a second opening is provided between the member and the moving part and is configured to allow movement of the moving part as seen from above the cavity, and
- wherein a position of the first opening does not overlap with a position of the second opening.
A semiconductor device, comprising:
- a cavity;
- a first film covering an upper portion of the cavity, wherein the first film has a first opening, and wherein the first opening is filled with a sealing material;
- a moving part enclosed in the cavity;
- a member enclosed in the cavity and in substantially a same vertical level as the moving part, wherein the member and the moving part form a second opening therebetween;
- an actuator configured to drive the moving part in a substantially horizontal direction;
- wherein the first and second openings are at different horizontal positions and different vertical levels.
A variable capacitor, comprising:
- a cavity;
- a first film covering an upper portion of the cavity, wherein the first film has a first opening, and wherein the first opening is filled with a sealing material;
- a moving part enclosed in the cavity;
- a member enclosed in the cavity and in substantially a same vertical level as the moving part, wherein a second opening is provided between the member and the moving part;
- an actuator comprising a piezoelectric element and configured to drive the moving part in a substantially horizontal direction;
- wherein the first and second openings are at different horizontal positions and different vertical levels.
Dependencies are inferred from the claim text.