ESD protection circuit
AssigneeMacronix International Co., Ltd.
InventorChun-Hsiang Lai
Life of this patent
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AssigneeMacronix International Co., Ltd.
InventorChun-Hsiang Lai
Estimating the term…
An ESD protection circuit includes a substrate, diode device, first snapback device, ring structure, second snapback device and a control circuit. The diode device is formed in the substrate. The first snapback device is formed in the substrate and includes a first heavy ion-doped region, a first gate and a second heavy ion-doped region. The first heavy ion-doped region is coupled to the diode device. The first gate is coupled to the second heavy ion-doped region. The ring structure is formed in the substrate and includes a third heavy ion-doped region located. The second gate is formed on the substrate between the second heavy ion-doped region and the third heavy ion-doped region to generate a second snapback device. The control circuit is connected to the third heavy ion-doped region for preventing the turn-on of a parasitic SCR formed in the substrate in a normal operation.
An ESD protection circuit, connected to an input pad, comprising:
An ESD protection circuit, connected to an input pad, comprising:
Dependencies are inferred from the claim text.