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AssigneeKabushiki Kaisha Toshiba
InventorsTadashi Iguchi, Yoshiaki Himeno, Hiroaki Tsunoda
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A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes element isolation/insulation films buried into a silicon substrate to isolate stripe-shaped element-forming regions. Formed on the substrate area floating gate via a first gate insulating film and further a control gate via a second gate insulating film. Source and drain diffusion layers are formed in self-alignment with control gates. The second gate insulating film on the floating gate is divided and separated together with the floating gate by slits above the element isolation/insulation films into discrete portions of individual memory cells.
A nonvolatile semiconductor memory device, comprising:
A nonvolatile semiconductor memory device, comprising:
Dependencies are inferred from the claim text.