Functional coating of the SCFM preform
AssigneeABB Schweiz AG
InventorsJérôme Assal, Stefan Kaufmann
Life of this patent
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Abstract
The invention relates to a power semiconductor module having at least one semiconductor chip (11) made of a semiconductor material and having a first and a second main electrode (12, 13), a first and a second main connection (91, 92) and a contact lamina (2) in electrical contact with the first main electrode (12) and the first main connection (92). The contact lamina (2) contains an alloying partner which can form a eutectic with the semiconductor material. According to the invention, the contact lamina is coated with an electrically conductive protective layer (31, 32) that prevents formation of a fixed material connection between the first main electrode (12) and the contact lamina (2).
Claims10
A power semiconductor module comprising
- at least one semiconductor chip made of a semiconductor material and having first and a second main electrodes,
- first and second main connections,
- a contact lamina in electrical contact with the first main electrode and the first main connection,
- the contact lamina containing an alloying partner capable of forming an eutectic between the alloying partner and the semiconductor material,
- the contact lamina being coated with an electrically conductive protective layer, wherein
- the protective layer has at least one electrically conductive base layer applied on the contact lamina, and an electrically conductive surface layer, which forms an external contact area,
- the base layer and the surface layer substantially comprise different materials, and
- the surface layer is present between the contact lamina and the first main connection and between the contact lamina and the semiconductor chip.
A power semiconductor module comprising
- at least one semiconductor chip made of a semiconductor material and having first and a second main electrodes,
- first and second main connections,
- a contact lamina in electrical contact with the first main electrode and the first main connection,
- the contact lamina containing an alloying partner capable of forming an eutectic between the alloying partner and the semiconductor material,
- the contact lamina being coated with an electrically conductive protective layer, wherein
- the protective layer has at least one electrically conductive base layer applied on the contact lamina, and
- an electrically conductive surface layer, which forms an external contact area,
- the surface layer substantially comprises Ru,
- an electrically conductive intermediate layer is provided between the surface layer and the base layer, said intermediate layer substantially comprising Au and having a thickness of approximately 0.2 μm, and
- the base layer has a thickness of 5 μm to 12 μm.
Dependencies are inferred from the claim text.