Diethylsilane as a silicon source in the deposition of metal silicate films

A method for forming hafnium silicate as a high k dielectric in an electronic device, comprising the steps of:

• providing diethylsilane at a flow rate of 5 to 100 standard cubic centimeters per minute to a reaction zone;
• concurrently providing a source of oxygen to the reaction zone;
• concurrently providing tetrakis(diethylamino)hafnium at a flow rate of 0.05 to 0.1 milliliters per minute to the reaction zone;
• reacting the diethylsilane, source of oxygen and tetrakis(diethylamino)hafnium by chemical vapor deposition to form hafnium silicate on a substrate comprising the electronic device.

A method for forming zirconium silicate as a high k dielectric in an electronic device, comprising the steps of:

• providing diethylsilane at a flow rate of 5 to 100 standard cubic centimeters per minute to a reaction zone;
• concurrently providing a source of oxygen to the reaction zone;
• concurrently providing tetrakis(diethylamino)zirconium at a flow rate of 0.05 to 0.1 milliliters per minute to the reaction zone;
• reacting the diethylsilane, source of oxygen and tetrakis(diethylamino)zirconium by chemical vapor deposition to form zirconium silicate on a substrate comprising the electronic device.