Method for fabricating fully silicided gate
AssigneeDongbu Electronics Co., Ltd.
InventorsDae-Young Kim, Han-Choon Lee
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Abstract
A method for fabricating a fully silicided gate, including forming a gate dielectric layer on a semiconductor substrate, depositing an amorphous silicon layer on the gate dielectric layer, forming a metallic layer on the amorphous silicon layer, depositing a hard mask on the metallic layer, wherein the amorphous silicon layer and the metal layer are silicided due to a thermal budget applied thereto, thereby forming a metal silicide layer, and patterning the metal silicide layer based on the hard mask to form a gate.
Claims4
A method for fabricating a fully silicided gate, comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- depositing an amorphous silicon layer on the gate dielectric layer;
- forming a metallic layer on the amorphous silicon layer;
- depositing a tetraethyl orthosilicate (TEOS) layer on the metallic layer thereby forming a hard mask by patterning the TEOS layer;
- and
- patterning the amorphous silicon layer and the metallic layer based on the hard mask to form a gate,
- wherein a thermal budget entailed by said depositing the TEOS layer causes the amorphous silicon layer and the metallic layer to be silicided, thereby forming a metal silicide layer.
A method for fabricating a fully silicided gate, comprising:
- forming a gate dielectric layer on a semiconductor substrate;
- depositing an amorphous silicon layer on the gate dielectric layer;
- forming a metallic layer on the amorphous silicon layer;
- depositing a tetraethyl orthosilicate (TEOS) layer on the metallic layer thereby forming a hard mask by patterning the TEOS layer;
- patterning the amorphous silicon layer and the metallic layer based on the hard mask to form a gate;
- and
- depositing an ONO (Oxide/Nitride/Oxide) layer on a sidewall of the gate thereby forming a spacer,
- wherein a thermal budget entailed by said depositing the TEOS layer causes the amorphous silicon layer and the metallic layer to be silicided, thereby forming a metal silicide layer, and
- wherein a thermal budget entailed by said depositing the ONO layer causes the hard mask and the gate to be silicided, thereby forming another metal silicide layer.
Dependencies are inferred from the claim text.