Method of manufacturing a semiconductor device having voids in a polysilicon layer
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-Joon Yeo, Won-Jun Lee, Tae-Hyun Kim, Ji-Hong Kim, Byoung-Moon Yoon
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate. The insulation pattern has at least one opening that exposes a surface of the substrate. Then, a first polysilicon layer is formed over the substrates such that the first polysilicon layer fills the opening. The first polysilicon layer also includes a void therein. An upper portion of the first polysilicon layer is removed such that void expands to a recess and the recess is exposed. A second polysilicon layer is formed over the substrate such that the second polysilicon layer fills the recess.
Claims22
A method of manufacturing a semiconductor device, comprising:
- forming an insulation pattern over a substrate, the insulation pattern having at least one opening that exposes a surface of the substrate;
- forming a first polysilicon layer over the substrates such that the first polysilicon layer fills the opening, the first polysilicon layer including a void therein;
- removing an upper portion of the first polysilicon layer such that void expands to a recess and the recess is exposed;
- forming a second polysilicon layer over the substrate such that the second polysilicon layer fills the recess;
- and
- partially removing an upper portion of the second polysilicon layer except for the portion of the second polysilicon layer filling the recess, to form a polysilicon pattern in the opening,
- wherein the removing the upper portion of the first polysilicon layer includes:
- planarizing the first polysilicon layer to expose the void;
- and
- expanding the void to form the recess.
A method of manufacturing a semiconductor device, comprising:
- forming an insulation pattern over a substrate, the insulation pattern having at least one opening that exposes a surface of the substrate;
- forming a first polysilicon layer over the substrates such that the first polysilicon layer fills the opening, the first polysilicon layer including a void therein;
- removing an upper portion of the first polysilicon layer such that void expands to a recess and the recess is exposed;
- forming a second polysilicon layer over the substrate such that the second polysilicon layer fills the recess;
- partially removing an upper portion of the second polysilicon layer except for the portion of the second polysilicon layer filling the recess, to form a polysilicon pattern in the opening;
- and
- forming a second dielectric layer over the substrate.
Dependencies are inferred from the claim text.