LDMOS device and method for manufacturing the same

A method for manufacturing a lateral diffused MOS device, the method comprising:

• forming a buried layer doped with a second conductive type impurity in a first conductive type substrate;
• forming a first well doped with the first conductive type impurity in the buried layer;
• forming a field insulator on a surface of the first well;
• forming a gate insulating layer on a surface of the first well at both sides of the field insulator;
• forming a second well doped with the first conductive type impurity in the first well at one side of the field insulator;
• forming a source region in a surface of the second well;
• forming a drain region isolated from the source region in the surface of the first well at the other side of the field insulator;
• forming a gate electrode on the gate insulating layer on the source region;
• forming a first field plate connected with the gate electrode on a predetermined portion of the field insulator;
• and
• forming a second field plate spaced apart by a predetermined spacing from the first field plate on another predetermined portion of the field insulator.