Method for producing a single crystal

A method for producing a single crystal by Czochralski method by pulling a seed crystal from a raw material melt, comprising:

• immersing the seed crystal into the raw material melt;
• and
• growing the single crystal by rotating and pulling the seed crystal, wherein:
• the single crystal is pulled while controlling a value of V/G (mm2/K·min) within a range of values of V/G (mm2/K·min);
• and
• the range of values of V/G (mm2/K·min), including a defect region and/or a defect-free region, is controlled according to Tmax(° C.);
• wherein:
• V (mm/min) is a single crystal pulling rate of pulling the single crystal;
• G (K/mm) is a temperature gradient at a solid-liquid interface, in a range of a melting point of the raw material and 1400° C.;
• Tmax(° C.) is a highest temperature of the raw material melt at an interface between a quartz crucible inner wall and the raw material melt;
• and
• the range of values of V/G (mm2/K·min) is:
• (A) from −0.000724 [mm2/(° C.·K·min)]×Tmax(° C.)+1.31 (mm2/K·min) to less than −0.000724 [mm2/(° C.·K·min)]×Tmax(° C.)+1.38 (mm2/K·min);
• or
• (B) −0.000724 [mm2/(° C.·K·min)]×Tmax(° C.)+1.38 (mm2/K·min) or more;
• or
• (C) from −0.000724 [mm2/(° C.·K·min)]×Tmax(° C.)+1.31 (mm2/K·min) to −0.000724 [mm2/(° C.·K·min)]×Tmax(° C.)+1.35 (mm2/K·min).