Method for removing carbon-containing residues from a substrate

A process for removing residues comprising silicon and carbon from a surface of a process chamber wherein the process chamber is used to deposit a composite organosilicate material, the process comprising:

• providing the process chamber wherein the chamber comprises a surface at least partially coated with residues;
• providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8;
• activating the process gas using at least one energy source to form reactive species;
• contacting the residues with the reactive species to form at least one volatile product;
• and
• removing the at least one volatile product from the process chamber.

A process for removing residues comprising silicon and carbon from a surface of a process chamber wherein the process chamber is used to deposit a composite organosilicate material, the process comprising:

• providing the process chamber wherein the chamber comprises a surface at least partially coated with residues;
• providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8;
• activating the process gas by applying at least one energy source to form reactive species wherein at least a portion of the process gas is activated within the process chamber and at least another portion of the process gas is activated in a location outside of the process chamber;
• contacting the residues with the reactive species to form at least one volatile product;
• and
• removing the at least one volatile product from the process chamber.

A process for removing residues comprising silicon and carbon from a surface of a process chamber wherein the process chamber is used to deposit a composite organosilicate material, the process comprising:

• providing the process chamber wherein the chamber comprises a surface at least partially coated with residues;
• providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8;
• activating the process gas by applying at least one energy source to form reactive species wherein a first portion of the process gas is activated outside of the process chamber and introduced into the process chamber and a second portion of the process gas is activated within the process chamber;
• contacting the residues with the reactive species to form at least one volatile product wherein the contacting step is conducted at a pressure of 5 torr or less;
• and
• removing at least one volatile product from the process chamber.

A process for the deposition of an composite organosilicate film on a substrate, the process comprising:

• placing the substrate into a process chamber;
• depositing the composite organosilicate film onto the substrate and a silicon and carbon-containing residue onto at least one surface within the chamber using a pore-forming precursor and a structure-forming precursor wherein the depositing step is conducted by a process selected from chemical vapor deposition, atomic layer deposition, vacuum deposition, spray pyrolysis and combinations thereof;
• providing a process gas comprising an oxygen source, a fluorine source, and optionally an additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 2 to about 8;
• activating the process gas by applying at least one energy source to form reactive species;
• contacting the residues with the reactive species to form at least one volatile product;
• and
• removing from the reactor the at least one volatile product to clean the reactor.