Atomic layer deposition method for depositing a layer
AssigneeImec
InventorsPaul Zimmerman, Matty Caymax, Stefan De Gendt, Annelies Delabie, Lars-Ake Ragnarsson
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Abstract
The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.
Claims37
An atomic layer deposition method for depositing a layer comprising the steps of:
- a) providing a semiconductor substrate in a reactor;
- b) providing a pulse of a first precursor gas into the reactor;
- c) providing a pulse of a second precursor gas into the reactor;
- and
- d) providing an inert atmosphere in the reactor;
- and
- after completion of step a), step b), step c, and step d),
- e) repeating at least once steps of providing a pulse of a first precursor gas into the reactor;
- providing a pulse of a second precursor gas into the reactor;
- and providing an inert atmosphere in the reactor;
- wherein the semiconductor substrate is exposed to UV irradiation at least once during step d), and whereby a layer is obtained by atomic layer deposition.
An atomic layer deposition method for depositing a layer comprising the steps of:
- a) providing a semiconductor substrate in a reactor;
- b) providing a pulse of a first precursor gas into the reactor;
- c) providing a pulse of a second precursor gas into the reactor;
- and
- d) providing an inert atmosphere in the reactor after step (c) and providing an inert atmosphere in the reactor between step (a) and step (b);
- between step (b) and step (c);
- or between each of step (a), step (b), and step (c);
- and
- after completion of step a), step b), step c, and step d),
- e) repeating at least once steps of providing a pulse of a first precursor gas into the reactor;
- providing a pulse of a second precursor gas into the reactor;
- and providing an inert atmosphere in the reactor;
- wherein the semiconductor substrate is exposed to UV irradiation at least once during step d), and whereby a layer is obtained by atomic layer deposition, and wherein the UV irradiation exposure is performed during two or more of the steps of providing an inert atmosphere in the reactor.
An atomic layer deposition method for depositing a layer comprising the steps of:
- a) providing a semiconductor substrate in a reactor;
- b) providing a pulse of a first precursor gas into the reactor;
- c) providing a pulse of a second precursor gas into the reactor;
- and
- d) providing an inert atmosphere in the reactor;
- and
- after completion of step a), step b), step c, and step d),
- e) repeating at least once steps of providing a pulse of a first precursor gas into the reactor;
- providing a pulse of a second precursor gas into the reactor;
- and providing an inert atmosphere in the reactor;
- wherein the semiconductor substrate is exposed to UV irradiation at least once during step d), and whereby a layer is obtained by atomic layer deposition, and wherein the layer has an increased density at an interface between the layer and the semiconductor substrate, such that defects at the interface are reduced, thereby improving an electrical characteristic of the layer.
Dependencies are inferred from the claim text.