Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same

A semiconductor device, comprising:

• a semiconductor substrate having a first region and a second region;
• a first well disposed within the first region;
• a nitrogen-incorporated active region formed within the first region;
• a first gate dielectric layer formed on the nitrogen-incorporated active region, the first gate dielectric layer including a first dielectric layer and a second dielectric layer, the second dielectric layer including diffused nitrogen from the nitrogen-incorporated active region;
• a first gate electrode disposed on the first gate dielectric layer;
• a second well disposed within the second region;
• an active region that is not a nitrogen incorporated region formed within the second region;
• a second gate dielectric layer formed on the second region, the second gate dielectric layer including another first dielectric layer;
• and
• a second gate electrode formed on the second gate dielectric layer;
• wherein
• the first well is a p-well, and the second well is an n-well or p-well, and
• the first gate dielectric layer has the same thickness as the second gate dielectric layer.