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US 7,547,629 B2Granted
Ferroelectric capacitor and its manufacturing method and ferroelectric memory device
AssigneeSeiko Epson Corporation
InventorsHiroaki Tamura, Hiroyuki Mitsui, Tatsuo Sawasaki
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Abstract
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.
Claims6
A method for manufacturing a ferroelectric capacitor, the method comprising the steps of:
- (a) forming a first crystalline barrier layer;
- (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer;
- (c) forming a first electrode above the second crystalline barrier layer;
- (d) forming a ferroelectric film on the first electrode;
- and
- (e) forming a second electrode on the ferroelectric film,
- wherein, in the step (b), the first crystalline barrier layer is annealed in an atmosphere containing nitrogen, thereby nitriding the first crystalline barrier layer, and the annealing is conducted at about 350° C. to 650° C.
4 more elements
A ferroelectric memory device comprising:
- a switching transistor;
- a plug that is electrically connected to the switching transistor;
- and
- a ferroelectric capacitor provided on the plug, wherein the ferroelectric capacitor includes a first electrode provided on a crystalline barrier layer composed of nitride, a ferroelectric film provided on the first electrode, and a second electrode provided on the ferroelectric film,
- wherein the crystalline barrier layer is annealed in an atmosphere containing nitrogen, thereby nitriding the first crystalline barrier layer, and the annealing is conducted at about 350° C. to 650° C.
2 more elements
Dependencies are inferred from the claim text.