Method for manufacturing capacitor
AssigneeElpida Memory, Inc.
InventorNoriaki Ikeda
Life of this patent
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Abstract
A method for manufacturing a capacitor includes depositing an interlayer insulating film on or above a plug connected to a switching element, forming a hole in the interlayer insulating film such that the opening portion of the hole is surrounded by an overhang structure and that the plug is exposed in the bottom of the hole, removing the overhang structure, forming a lower electrode on the inner surface of the deep hole, forming a dielectric on the lower electrode, and forming an upper electrode on the dielectric. The above steps prevent the formation of a gap in the capacitor, since the overhang structure as a cause of the gap is removed. The coverage by the dielectric is also prevented from being poor.
Claims9
A method for manufacturing a semiconductor device, comprising:
- depositing an interlayer insulating film on or above a plug connected to a switching element;
- forming a hole in said interlayer insulating film such that an opening portion of said hole is surrounded by an overhang structure and that said plug is exposed in a bottom of said hole;
- removing said overhang structure;
- forming a lower electrode of a capacitor on an inner surface of said hole;
- forming a dielectric on said lower electrode;
- and
- forming an upper electrode of the capacitor on said dielectric.
A method of manufacturing a semiconductor device, comprising:
- depositing an interlayer insulating film on a semiconductor substrate, said depositing said interlayer insulating film comprising:
- depositing a first interlayer insulating film;
- and
- depositing a second interlayer insulating film on said first interlayer insulating film;
- forming a hole in said interlayer insulating film such that a top portion of the hole has an inner surface in a shape of an overhang;
- and
- removing said top portion of the hole,
- wherein an etching rate of said second interlayer insulating film is greater than an etching rate of said first interlayer insulating film upon wet etching, and
- wherein said removing the top portion of the hole comprises removing a top portion of the second interlayer insulating film by the wet etching.
Dependencies are inferred from the claim text.