Semiconductor device including container having epitaxial silicon therein
AssigneeMicron Technology, Inc.
InventorsNirmal Ramaswamy, Cem Basceri
Life of this patent
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Abstract
Methods for growing epitaxial silicon are provided. Methods for controlling bottom stacking fault propagation in epitaxial silicon are also provided.
Claims36
A semiconductor device including a container having epitaxial silicon therein comprising:
- a silicon substrate;
- a container comprising a liner having sidewalls and a base, wherein the liner is over the silicon substrate;
- said base comprising a confining tab and an opening exposed to said silicon substrate;
- and, epitaxial silicon substantially filling said container.
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the base of the liner to create a confining tab and to expose the silicon substrate;
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled;
- and
- annealing, etching, or re-oxidizing said epitaxially grown silicon to remove said stacking faults.
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the sidewalls and a portion of the base of the liner to create a confining tab and to expose the silicon substrate;
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled;
- and
- annealing, etching, or re-oxidizing said epitaxially grown silicon to remove said stacking faults.
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is at the base of the container over the silicon substrate;
- etching the liner to create a confining tab and to expose the silicon substrate;
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled;
- and
- annealing, etching, or re-oxidizing said epitaxially grown silicon to remove said stacking faults.
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the base of the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled;
- and
- annealing, etching, or re-oxidizing said epitaxially grown silicon to remove said stacking faults.
A method for controlling bottom stacking fault propagation in epitaxial silicon substrate, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is over the silicon substrate;
- etching the sidewalls and a portion of the base of the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled;
- and
- annealing, etching, or re-oxidizing said epitaxially grown silicon to remove said stacking faults.
A method for controlling bottom stacking fault propagation in epitaxial silicon, comprising:
- providing a silicon substrate that supports a container comprising a liner, wherein the liner is at the base of the container over the silicon substrate;
- etching the liner to create a confining tab and to expose the silicon substrate;
- forming a plasma from a gas flow, wherein the gas flow comprises an etchant gas;
- exposing the silicon substrate to the plasma;
- growing silicon epitaxially in the container, wherein bottom stacking fault propagations are controlled;
- and
- annealing, etching, or re-oxidizing said epitaxially grown silicon to remove said stacking faults.
Dependencies are inferred from the claim text.