Semiconductor device
AssigneeHewlett-Packard Development Company, L.P.
InventorsRandy L. Hoffman, Gregory S. Herman, Peter P. Mardilovich
Life of this patent
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Abstract
One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.
Claims21
A method of forming a channel, comprising:
- providing at least one precursor composition including one or more precursor compounds that include Ax, one or more precursor compounds that include Bx, and one or more precursor compounds that include Cx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different;
- and
- depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.
A method of manufacturing a semiconductor device, comprising:
- providing a drain electrode;
- providing a source electrode;
- a step for providing a precursor composition including one or more precursor compounds that include Ax, one or more precursor compounds that include Bx, and one or more precursor compounds that include Cx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A, B, and C are different;
- a step for depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple the drain electrode and the source electrode;
- providing a gate electrode;
- and
- providing a gate dielectric positioned between the gate electrode and the channel.
A method for operating a semiconductor device, comprising:
- providing a semiconductor device that includes a source electrode, a drain electrode, and a channel to electrically couple the source electrode and the drain electrode, a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multicomponent oxide selected from at least one metal cation from group 12, at least one metal cation from group 13, and at least one metal cation from group 14, wherein group 12 cations include Zn and Cd, group 13 cations include Ga and In, group 14 cations include Ge, Sn, and Pb, wherein each component in the multicomponent oxide is different;
- and
- applying a voltage to the gate electrode to effect a flow of electrons through the channel.
Dependencies are inferred from the claim text.