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US 7,547,561 B2Granted
Advanced process control model incorporating a target offset term
AssigneeAdvanced Micro Devices, Inc.
InventorsUwe Schulze, Martin Mazur, Andreas Becker
Life of this patent
Estimating the term…
Abstract
An advanced process control (APC) architecture comprising a process model that incorporates a target offset term is provided. The APC architecture may be applied to a so-called develop inspect critical dimension (DICD) model using the target offset term to correct at least one exposure parameter on the occurrence of an abrupt event. A corresponding event may, for example, concern a modified reflectivity of processed substrates, for example due to a rework of substrates covered by amorphous carbon material.
Claims7
A method, comprising:
- providing a processed substrate having a rework status representative of a number of rework processes performed on said substrate;
- and
- exposing a photoresist layer provided above said substrate, wherein at least one exposure parameter is determined by an advanced process controller at least on the basis of said rework status, wherein said advanced process controller comprises a process model comprising a target value and a target offset value to correct a time-dependent variation.
Dependencies are inferred from the claim text.