Binary group III-nitride based high electron mobility transistors
AssigneeCree, Inc.
InventorAdam William Saxler
Life of this patent
Estimating the term…
Abstract
Binary Group III-nitride high electron mobility transistors (HEMTs) and methods of fabricating binary Group III-nitride HEMTs are provided. In some embodiments, the binary Group III-nitride HEMTs include a first binary Group III-nitride barrier layer, a binary Group III-nitride channel layer on the first barrier layer; and a second binary Group III-nitride barrier layer on the channel layer. In some embodiments, the binary Group III-nitride HEMTs include a first AIN barrier layer, a GaN channel layer and a second AIN barrier layer.
Claims34
A high electron mobility transistor (HEMT), comprising:
- a first binary Group III-nitride barrier layer;
- a binary Group III-nitride channel layer on the first barrier layer;
- a second binary Group III-nitride barrier layer on the channel layer, wherein the first barrier layer comprises a doped binary Group III-nitride region;
- and
- an undoped binary Group III-nitride layer disposed between the doped binary Group III-nitride region and the channel layer.
A high electron mobility transistor (HEMT), comprising:
- a first binary Group III-nitride barrier layer;
- a binary Group III-nitride channel layer on the first barrier layer;
- and
- a second binary Group III-nitride barrier layer on the channel layer, wherein the first barrier layer comprises a doped binary Group III-nitride region, wherein the second barrier layer comprises a first doped binary Group III-nitride region on the binary Group III-nitride channel layer opposite the first barrier layer.
A high electron mobility transistor (HEMT). comprising:
- a first binary Group III-nitride barrier layer;
- a binary Group III-nitride channel layer on the first barrier layer;
- a second binary Group III-nitride barrier layer on the channel layer, wherein the second barrier layer comprises a first doped binary Group III-nitride region on the binary Group III-nitride channel layer opposite the first barrier layer;
- and
- an undoped binary Group III-nitride layer disposed between the first doped binary Group III-nitride region and the channel layer.
A high electron mobility transistor (HEMT), comprising:
- a first binary Group III-nitride barrier layer;
- a binary Group III-nitride channel layer on the first barrier layer;
- a second binary Group III-nitride barrier layer on the channel layer, wherein the first barrier layer comprises an AIN layer, the channel layer comprises a GaN layer and the second barrier layer comprises an AIN layer;
- and
- a first doped AIN layer disposed between the first AIN barrier layer and the GaN channel layer.
A high electron mobility transistor (HEMT), comprising:
- a first binary Group III-nitride barrier layer;
- a binary Group III-nitride channel layer on the first barrier layer;
- a second binary Group III-nitride barrier layer on the channel layer, wherein the first barrier layer comprises an AIN layer, the channel layer comprises a GaN layer and the second barrier layer comprises an AIN layer;
- and
- a doped AIN layer disposed between the second AIN barrier layer and the GaN channel layer.
Dependencies are inferred from the claim text.