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US 7,527,900 B2Granted
Reticle and optical proximity correction method
AssigneeUnited Microelectronics Corp.
InventorsWen-Zhan Zhou, Jin Yu, Kai-Hung Alex See
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Abstract
An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.
Claims16
A reticle comprising:
- a primary mask having a primary pattern;
- and
- an assist mask having a correction pattern substantially complementary to the primary pattern, wherein the primary mask and the assist mask are overlapping in a vertical direction, and the primary pattern of the primary mask and the correction pattern of the assist mask are spaced in the vertical direction with a gap therebetween.
An optical proximity correction (OPC) method comprising:
- providing a primary mask having a primary pattern;
- forming an assist mask having a correction pattern substantially complementary to the primary pattern;
- and
- forming a reticle by overlapping the primary mask and the assist mask, wherein the primary mask and the assist mask are overlapping in a vertical direction, and the primary pattern of the primary mask and the correction pattern of the assist mask are spaced in the vertical direction with a gap therebetween;
- wherein a light transmittance of the correction pattern is adjustable so as to equalize a light intensity distribution of the primary mask.
2 more elements
Dependencies are inferred from the claim text.