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US 7,514,766 B2Granted
Semiconductor device
AssigneeNEC Electronics Corporation
InventorMasatoshi Yoshida
Life of this patent
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Abstract
A semiconductor device in which the threshold voltage of transistors is controlled through the applied substrate bias and having relatively small size. The semiconductor device includes: a clock signal line; a shield wiring for shielding the clock signal line from another interconnection; and a substrate bias generating circuit. The substrate bias is applied through the shield wiring to a region on which a transistor is formed. The threshold voltage of the transistor depends to the substrate bias applied to the transistor.
Claims5
A semiconductor device comprising:
- a semiconductor substrate;
- a transistor;
- a clock signal line;
- a shield wiring, which shields said clock signal line from at least one interconnection;
- and
- a substrate bias generating section, electrically connected to said shield wiring, and configured to generate a substrate bias and apply said substrate bias through said shield wiring to a predetermined region on said substrate on which said transistor is formed,
- wherein a threshold voltage of said transistor depends on said substrate bias applied to said transistor.
4 more elements
Dependencies are inferred from the claim text.