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US 7,482,238 B2Granted
Method for manufacturing semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorWoong Je Sung
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes steps of injecting a hole current into an N drift region while a constant voltage is applied to a P+ anode of a lateral insulated gate bipolar transistor, such that a majority of the hole current passes through a P+ cathode of the lateral insulated gate bipolar transistor via a P+ buried layer. Therefore, a hole-current path located under an N+ cathode area of a LIGBT structure is eliminated, thus securing sufficient latch-up current density.
Claims1
A method for manufacturing and operating a semiconductor device, comprising:
- forming a P+ buried layer;
- forming an N drift region formed over the P+ buried layer;
- forming a cathode, a gate, and an anode over the P+ buried layer, the cathode, the gate, and the anode being spaced apart from each another;
- forming a P+ cathode below the cathode and over the P+ buried layer;
- forming a P-base area below the gate and over the P+ buried layer, the P-base are being spaced apart from the P+ cathode;
- forming a P+ anode below the anode and over the P+ buried layer;
- forming a N+ cathode over the P+ buried layer and between the cathode and gate, wherein the P-base area is not formed below the N+ cathode;
- and
- injecting a hole current into the N drift region while a constant voltage is applied to the P+ anode, such that a majority of the hole current passes through the P+ cathode of via the P+ buried layer.
6 more elements
Dependencies are inferred from the claim text.