Back to results
US 7,479,701 B2Granted
Dummy metal fill shapes for improved reliability of hybrid oxide/low-k dielectrics
AssigneeInternational Business Machines Corporation
InventorHoward S. Landis
Life of this patent
Estimating the term…
Abstract
Semiconductor structure including a first rigid dielectric layer and a second rigid dielectric layer. A first non-rigid low-k dielectric layer is formed between the first and second rigid dielectric layer. A plurality of dummy fill shapes is formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone.
Claims11
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- a plurality of dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone;
- and
- an interconnect arranged on the first non-rigid low-k dielectric layer, wherein the dummy fill shapes surround the interconnect and are aligned with one another in rows and columns,
- wherein the dummy fill shapes physically connect together the first and second rigid dielectric layers and have a density of approximately between 45% and 50% of a density of the first non-rigid low-k dielectric layer.
4 more elements
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- a plurality of dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the plurality of dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone;
- a second non-rigid low-k dielectric layer formed on the second rigid dielectric layer;
- a third rigid dielectric layer formed on the second non-rigid low-k dielectric layer;
- a metal interconnect extending between the second and third rigid dielectric layers and formed in the second non-rigid low-k dielectric layer;
- and
- additional dummy fill shapes formed in the second non-rigid low-k dielectric layer in proximity to the metal interconnect, the additional dummy fill shapes being formed of a material such that an overall CTE of the at least one dummy fill shape better matches to the second and third rigid dielectric layers than that of the second non-rigid low-k dielectric layer,
- wherein the dummy fill shapes physically connect together the first and second rigid dielectric layers and have a density of approximately between 45% and 50% of a density of the first non-rigid low-k dielectric layer.
7 more elements
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- first dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the first dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone;
- the first dummy fill shapes physically connecting together the first and second rigid dielectric layers and having a density of approximately between 45% and 50% of a density of the first non-rigid low-k dielectric layer;
- a second non-rigid low-k dielectric layer formed on the second rigid dielectric layer;
- a third rigid dielectric layer formed on the second non-rigid low-k dielectric layer;
- a metal interconnect extending between the second and third rigid dielectric layers and formed in the second non-rigid low-k dielectric layer;
- second dummy fill shapes formed in the second non-rigid low-k dielectric layer in proximity to the metal interconnect;
- and
- the second dummy fill shapes physically connecting together the second and third rigid dielectric layers and having a density of approximately between 45% and 50% of a density of the second non-rigid low-k dielectric layer.
8 more elements
A semiconductor structure, comprising:
- a first rigid dielectric layer;
- a second rigid dielectric layer;
- a first non-rigid low-k dielectric layer formed between the first and second rigid dielectric layer;
- first dummy fill shapes formed in the first non-rigid layer which replace portions of the first non-rigid low-k dielectric layer with lower coefficient of thermal expansion (CTE) metal such that an overall CTE of the first non-rigid low-k dielectric layer and the first dummy fill shapes matches a CTE of the first and second rigid dielectric layers more closely than that of the first non-rigid low-k dielectric layer alone;
- the first dummy fill shapes physically connecting together the first and second rigid dielectric layers and having a density of approximately between 45% and 50% of a density of the first non-rigid low-k dielectric layer;
- a second non-rigid low-k dielectric layer formed on the second rigid dielectric layer;
- a third rigid dielectric layer formed on the second non-rigid low-k dielectric layer;
- a metal interconnect extending between the second and third rigid dielectric layers and formed in the second non-rigid low-k dielectric layer;
- second dummy fill shapes formed in the second non-rigid low-k dielectric layer in proximity to the metal interconnect;
- and
- the second dummy fill shapes physically connecting together the second and third rigid dielectric layers and having a density of approximately between 45% and 50% of a density of the second non-rigid low-k dielectric layer,
- wherein a size of the second dummy fill shapes is three times a minimum line width of the second non-rigid low-k dielectric layer, and one of:
- the second dummy fill shapes surround the metal interconnect and are aligned with one another in rows and columns;
- and
- the second dummy fill shapes are square and arranged in a staggered offset pattern.
12 more elements
Dependencies are inferred from the claim text.