Low temperature aerosol deposition of a plasma resistive layer
AssigneeApplied Materials, Inc.
InventorsJennifer Y. Sun, Elmira Ryabova, Senh Thach, Xi Zhu, Semyon L. Kats
Life of this patent
Estimating the term…
Abstract
Embodiments of the present invention provide a method for low temperature aerosol deposition of a plasma resistive layer on semiconductor chamber components/parts. In one embodiment, the method for low temperature aerosol deposition includes forming an aerosol of fine particles in an aerosol generator, dispensing the aerosol from the aerosol generator into a processing chamber toward a surface of a substrate, maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius, and depositing a layer from material in the aerosol on the substrate surface.
Claims21
A method for low temperature aerosol deposition for semiconductor processing chamber components, comprising:
- forming an aerosol of fine particles in an aerosol generator;
- dispensing the aerosol from the generator into a processing chamber and toward a surface of a substrate comprising a material;
- maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius;
- embedding at least a portion of the fine particles in the surface of the substrate to form a bonding layer comprising an alloy of the fine particles and the substrate material;
- and
- depositing a layer from material in the aerosol on the bonding layer.
A method for low temperature aerosol deposition for semiconductor processing chamber components, comprising:
- forming an aerosol of fine particles in an aerosol generator;
- dispensing the aerosol from the generator into a processing chamber toward a surface of a substrate comprising a material;
- maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius;
- embedding at least a portion of the fine particles in the surface of the substrate to form a bonding layer comprising an alloy of the fine particles and the substrate material;
- and
- depositing a rare earth metal containing layer on the bonding layer.
A method for low temperature aerosol deposition for semiconductor processing chamber components, comprising:
- forming an aerosol of fine particles in an aerosol generator having a diameter less than 2 μm;
- dispensing the aerosol from the generator into a processing chamber toward a surface of a substrate comprising a material;
- maintaining the substrate temperature at between about 0 degrees Celsius and 50 degrees Celsius;
- embedding at least a portion of the fine particles in the surface of the substrate to form a bonding layer comprising an alloy of the fine particles and the substrate material;
- and
- depositing a rare earth metal containing layer on the bonding layer.
Dependencies are inferred from the claim text.