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US 7,479,463 B2Granted
Method for heating a chemically amplified resist layer carried on a rotating substrate
AssigneeTokyo Electron Limited
InventorsJohn Kulp, Michael Carcasi, Merritt Funk
Life of this patent
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Abstract
Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.
Claims10
A method for processing a chemically amplified resist carried on a substrate, the method comprising:
- rotating the substrate at a first rotational speed;
- contacting the chemically amplified resist with a fluid heated to a temperature effective to activate the chemically amplified resist;
- and
- contacting the substrate with a developer fluid effective to remove a portion of the chemically amplified resist after the chemically amplified resist is activated by contact with the heated fluid.
1 more element
A method of processing a chemically amplified resist layer on the substrate, the method comprising:
- rotating the substrate;
- and
- contacting the chemically amplified resist layer with a heated developer fluid at a temperature effective to activate the chemically amplified resist and, after activation, effective to partially remove the chemically amplified resist layer.
Dependencies are inferred from the claim text.