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US 7,479,461 B2Granted
Method of etching silicon anisotropically
AssigneesInfineon Technologies AG, Nanya Technology Corporation
InventorsTeng-Wang Huang, Kristin Schupke
Life of this patent
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Abstract
A method for etching Si anisotropically uses a solution containing NH4F and HF.
Claims3
A process for structuring of deep trenches, comprising:
- providing silicon dioxide and silicon layers;
- and
- simultaneously etching the silicon dioxide and silicon layers using a solution including NH4F and HF, wherein the silicon layer is etched anisotropically.
A method for etching silicon and silicon oxide layers, comprising:
- etching silicon and silicon dioxide layers using a solution consisting of NH4F, HF and water, wherein the silicon layer is etched anisotropically, and the etching rates of the silicon and silicon oxide layers are substantially the same.
Dependencies are inferred from the claim text.