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US 7,479,447 B2Granted
Method of forming a crack stop void in a low-k dielectric layer between adjacent fuses
AssigneeInternational Business Machines Corporation
InventorsTimothy H. Daubenspeck, Christopher D. Muzzy, Paul S. McLaughlin, Judith A. Wright, Jean E. Wynne, Dae Young Jung
Life of this patent
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Abstract
A crack stop void is formed in a low-k dielectric layer between adjacent fuse structures for preventing propagation of cracks between the adjacent fuse structures during a fuse blow operation. The crack stop void is formed simultaneously with the formation of an interconnect structure.
Claims20
A method comprising the steps of:
- providing a substrate including a plurality of fuse structures formed thereupon;
- and
- simultaneously forming a material-free region between adjacent ones of said fuse structures while removing a portion of a conductor layer to form an interconnect structure.
A method comprising the steps of:
- providing a substrate including a plurality of fuse structures formed in a first dielectric layer;
- forming at least a second dielectric layer over said plurality of fuse structures;
- forming an opening in said at least second dielectric layer between adjacent ones of said fuse structures;
- forming a conductor layer on said second dielectric layer filling said opening;
- and
- patterning said conductor layer to simultaneously form a first interconnect structure and a void in said opening, wherein said void prevents propagation of cracks between said adjacent fuse structures during a fuse blow operation.
3 more elements
Dependencies are inferred from the claim text.