Method for forming high-K charge storage device

A method of fabrication of a non-volatile memory device comprising the steps of:

• a) forming a bottom tunnel layer over a substrate;
• the bottom tunnel layer comprised of a lower oxide tunnel layer and an upper hafnium oxide tunnel layer;
• b) forming a charge storage layer over the bottom tunnel layer;
• said charge storage layer is comprised of tantalum oxide;
• c) forming a lower hafnium oxide blocking layer over the charge storage layer;
• c1) in a block anneal step, annealing the lower hafnium oxide blocking layer in a nitrogen containing atmosphere;
• d) forming an upper cap oxide layer over the lower hafnium oxide blocking layer;
• the lower hafnium oxide blocking layer and the upper cap oxide layer form a top blocking layer;
• e) forming a gate electrode over the top blocking layer;
• f) patterning the bottom tunnel layer, the charge storage layer, the upper cap oxide layer, the lower hafnium oxide blocking layer, and the gate electrode to form a gate structure;
• and
• g) forming source/drain regions in the substrate adjacent to the gate structure.

A method of fabrication of a non-volatile memory device comprising the steps of:

• a) forming a bottom tunnel layer over and in contact with a substrate;
• the bottom tunnel layer comprised of a lower oxide tunnel layer and an upper hafnium oxide tunnel layer;
• the lower oxide tunnel layer is below and in contact with the upper hafnium oxide tunnel layer;
• b) in a tunnel anneal step, annealing the bottom tunnel layer in a hydrogen containing atmosphere;
• c) forming a charge storage layer over and in contact with the bottom tunnel layer;
• said charge storage layer consists essentially of tantalum oxide;
• d) in a storage anneal step, annealing the charge storage layer in a nitrogen containing atmosphere;
• e) forming a lower hafnium oxide blocking layer over and in contact with the charge storage layer;
• f) in a block anneal step, annealing the lower hafnium oxide blocking layer in a nitrogen containing atmosphere;
• g) forming an upper cap oxide layer over and in contact with the lower hafnium oxide blocking layer;
• the lower hafnium oxide blocking layer and the upper cap oxide layer form a top blocking layer;
• h) forming a gate electrode over and in contact with the top blocking layer;
• i) patterning the bottom tunnel layer, the charge storage layer, and the top blocking layer and the gate electrode to form a gate structure;
• and
• j) forming source/drain regions in the substrate adjacent to the gate structure.