Hybrid-orientation technology buried n-well design
AssigneeInternational Business Machines Corporation
InventorsWilfried E. Haensch, Edward J. Nowak
Life of this patent
Estimating the term…
Abstract
A semiconductor structure is provided that includes a hybrid orientated substrate having at least two coplanar surfaces of different surface crystal orientations, wherein one of the coplanar surfaces has bulk-like semiconductor properties and the other coplanar surface has semiconductor-on-insulator (SOI) properties. In accordance with the present invention, the substrate includes a new well design that provides a large capacitance from a retrograde well region of the second conductivity type to the substrate thereby providing noise decoupling with a low number of well contacts. The present invention also provides a method of fabricating such a semiconductor structure.
Claims11
A method of fabricating a semiconductor structure comprising:
- providing a hybrid orientation substrate having at least two coplanar surfaces of different surface crystal orientations, wherein one of said coplanar surfaces is a bulk semiconductor region and the other coplanar surface is a semiconductor-on-insulator (SOI) region;
- forming a doped region of a second conductivity type in a bulk layer of a first conductivity type of the hybrid orientation substrate, said doped region is located beneath a buried insulator layer and extending from a first of said bulk regions under a first of said semiconductor-on-insulator regions to a second of said bulk regions;
- and
- forming semiconductor devices on each of said coplanar surfaces of different surface crystal orientations, wherein each semiconductor device in the bulk regions includes a well region, wherein the well region of said first bulk region and the well region of said second bulk region are electrically coupled by said doped region.
Dependencies are inferred from the claim text.