Structure, system and method for dimensionally unstable layer dimension measurement

#1. Field of the Invention

#The invention relates generally to dimensionally unstable layers, such as but not limited to photoresist layers, used for fabricating microelectronic structures. More particularly, the invention relates to patterned dimensionally unstable layers, such as patterned photoresist layers, used for fabricating microelectronic structures.

#2. Description of the Related Art

#The objects, features and advantages of the invention are understood within the context of the Description of the Preferred Embodiments, as set forth below. The Description of the Preferred Embodiments is understood within the context of the accompanying drawings, which form a material part of this disclosure, wherein:

#FIG. 1 shows a schematic cross-sectional diagram illustrating a first embodiment of a structure in accordance with the invention.

#FIG. 2 shows a schematic plan-view diagram corresponding with the schematic cross-sectional diagram of FIG. 1.

#The invention provides a patterned dimensionally unstable layer structure, a system for analysis thereof and a method for analysis thereof. The structure, system and method are directed towards accurate measurement of a dimension of a patterned dimensionally unstable layer when using an apparatus that induces a variation of the dimension. To that end, the structure, system and method use a patterned dimensionally unstable layer pattern design that correlates with an algorithm intended to determine the dimension when measured using the apparatus that induces the variation of the dimension.

#FIG. 1 shows a schematic cross-sectional diagram of a structure in accordance with a first embodiment of the invention.

#FIG. 1 shows a substrate 10. A series of patterned dimensionally unstable layers 12a, 12b, 12c and 12d (i.e., most typically patterned photoresist layers) is located and formed upon the substrate 10.