Semiconductor device manufacturing method

A semiconductor device manufacturing method comprising:

• measuring a first flatness of each of a plurality exposure mask blank of substrates before formation of a light-shielding film thereon;
• predicting, on the basis of the first flatness, a second flatness of said each substrate when said each substrate is chucked on an exposure apparatus;
• selecting, from the plurality of substrates, at least one first substrate having a first predetermined flatness on the basis of the second flatness;
• forming a light-shielding film on the selected at least one first substrate;
• measuring a third flatness of the at least one first substrate, the at least one first substrate having the formed light-shielding film;
• predicting, on the basis of the third flatness, a fourth flatness of the at least one first substrate when the at least one first substrate, after formation of the light-shielding film, is chucked on the exposure apparatus;
• selecting, from the at least one first substrate, at least one second substrate having a predetermined second flatness on the basis of the fourth flatness;
• and
• manufacturing an exposure mask by forming a desired pattern on the selected at least one second substrate;
• chucking the exposure mask in the exposure apparatus;
• and
• illuminating a pattern formed on the exposure mask, which is to be used to form a semiconductor element, by an illumination optical system to transfer an image of the pattern onto a predetermined substrate.