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US 7,479,355 B1Granted
Mask design for enhancing line end resolution
AssigneeInternational Business Machines Corporation
InventorsZheng G. Chen, Allen H. Gabor
Life of this patent
Estimating the term…
Abstract
A mask design for enhancing line end resolution is provided. In an embodiment, a mask for use in patterning an underlying layer comprises opaque regions and transparent regions arranged to define a line having an end, a slit extending laterally through the line a spaced distance from the end of the line, and a feature extending above or below the space adjacent to the end of the line.
Claims4
A mask for use in patterning an underlying layer, comprising:
- opaque regions and transparent regions arranged to define a line having an end, wherein a slit extends laterally through the end of the line and a feature extends above or below a space adjacent to the end of the line, and wherein the slit is opposite tone and the feature is same tone relative to the line such that a combined effect of the slit and the feature enhances line end resolution.
Dependencies are inferred from the claim text.