High power semiconductor laser device
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsByung Jin Ma, Seong Ju Bae
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Abstract
In a high power semiconductor laser device, first and second conductivity type clad layers are provided. An active layer is interposed between the first and second conductivity type clad layers. A first optical guide layer is disposed between the first conductivity type clad layer and the active layer. A second optical guide layer is disposed between the second conductivity clad layer and the active layer. Also, an intentionally undoes optical loss confinement region is formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.
Claims7
A semiconductor laser device comprising:
- first and second conductivity type clad layers;
- an active layer interposed between the first and second conductivity type clad layers;
- a first optical guide layer disposed between the first conductivity type clad layer and the active layer;
- a second optical guide layer disposed between the second conductivity clad layer and the active layer;
- and
- an intentionally undoped optical loss confinement region formed in a portion of at least one of the first and second conductivity type clad layers overlapping laser beam distribution.
Dependencies are inferred from the claim text.