US 7,466,735 B2 · Manufacturing method of semiconductor device · patentgrep

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Abstract

When CW laser is irradiated on a semiconductor film while being relatively scanned in a fabrication process of a semiconductor device, many crystal grains extending in a scanning direction are formed. The semiconductor film irradiated in this way has characteristics substantially approximate to those of a single crystal in the scanning direction. However, because productivity and uniformity of laser annealing are low, mass-production is difficult. A plurality of laser beams is processed into linear beams and is allowed to possess mutually superposing portions to form a more elongated linear beam and to thus improve productivity. The linear beams the overlapping to one another have a positional relation satisfying a predetermined limitation formula, and uniformity of laser annealing can be remarkably improved.

Claims58

Dependent claims

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
doping an impurity element to the crystalline semiconductor film;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is an ellipsoid shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
((x−x′)/a)2+((y−y′)/b)2<0.722, and
wherein a, b, x, x′, y, and y′ are positive numbers.

5 more elements

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
doping an impurity element to the crystalline semiconductor film;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is a rectangular shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film through a lens provided obliquely to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
|y−y′|/b<0.72 and |x−x′|<a,
wherein an energy distribution of the linear beam in the direction of the major diameter is uniform and an energy distribution in the direction of the minor diameter is a Gaussian distribution, and
wherein a, b, x, x′, y, and y′ are positive numbers.

6 more elements

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
doping an impurity element to the crystalline semiconductor film;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is a rectangular shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film through a lens provided obliquely to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
|x−x′|/a<0.72 and |y−y′|<b,
wherein an energy distribution of the linear beam in the direction of the minor diameter is uniform and an energy distribution in the direction of the major diameter is a Gaussian distribution, and
wherein a, b, x, x′, y, and y′ are positive numbers.

6 more elements

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
doping an impurity element to the crystalline semiconductor film;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is a rectangular shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film through a lens provided obliquely to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
|x−x′|/a<0.72 and |y−y′|/b<0.72,
wherein an energy distribution of the linear beam in the direction of the major diameter is a Gaussian distribution and an energy distribution in the direction of the minor diameter is a Gaussian distribution, and
wherein a, b, x, x′, y, and y′ are positive numbers.

6 more elements

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
forming a gate electrode over the crystalline semiconductor film;
doping an impurity element to the crystalline semiconductor film using the gate electrode as a mask;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is a rectangular shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film through a lens provided obliquely to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
|y−y′|/b<0.72 and |x−x′|<a,
wherein an energy distribution of the linear beam in the direction of the major diameter is uniform and an energy distribution in the direction of the minor diameter is a Gaussian distribution, and
wherein a, b, x, x′, y, and y′ are positive numbers.

7 more elements

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
forming a gate electrode over the crystalline semiconductor film;
doping an impurity element to the crystalline semiconductor film using the gate electrode as a mask;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is a rectangular shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film through a lens provided obliquely to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
|x−x′|/a<0.72 and |y−y′|<b,
wherein an energy distribution of the linear beam in the direction of the minor diameter is uniform and an energy distribution in the direction of the major diameter is a Gaussian distribution, and
wherein a, b, x, x′, y, and y′ are positive numbers.

7 more elements

A manufacturing method of a semiconductor device comprising:

forming a crystalline semiconductor film over a substrate;
forming a gate electrode over the crystalline semiconductor film;
doping an impurity element to the crystalline semiconductor film using the gate electrode as a mask;
extending first and second laser beams emitted from at least first and second laser oscillators wherein each of the first and second laser beams is a rectangular shape having an e−2 width of a major diameter a and an e−2 width of a minor diameter b;
and
activating the impurity element introduced in the crystalline semiconductor film by directing the first and second laser beams to the crystalline semiconductor film through a lens provided obliquely to the crystalline semiconductor film so that one edge of the first laser beam overlaps with one edge of the second laser beam in the longitudinal direction of the first and second laser beams,
wherein the following relation is satisfied when center coordinates of the first and second laser beams are (x, y) and (x′, y′), respectively, an X axis is drawn in parallel with said major diameter, and Y axis is drawn in parallel with the minor diameter:
|x−x′|/a<0.72 and |y−y′|/b<0.72,
wherein an energy distribution of the linear beam in the direction of the major diameter is a Gaussian distribution and an energy distribution in the direction of the minor diameter is a Gaussian distribution, and
wherein a, b, x, x′, y, and y′ are positive numbers.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/480,886Filed 6 Jul 2006 · division
Priority: JP 2001-39069821 Dec 2001
Published: US 2007/0020897 A125 Jan 2007
Granted: 16 Dec 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

Family

Application10/324,078Parent of this division · filed 20 Dec 2002
US 2007/0020897 A1Pre-grant publication · published 25 Jan 2007
US 7,113,527 B2Parent of this division
US 2004/0136416 A1Published application
US 7,466,735 B2This patent

From the US filing history. Foreign family members aren’t listed.

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