Magnetic random access memory

A method of writing to a magnetic random access memory (MRAM) cell, the method comprising:

• applying a heating current to a word line to heat a magnetic memory element to a threshold temperature to reduce coercivity of the memory element, wherein the memory element comprises only magnetic material in one or more planar magnetic layers, the magnetic layers comprising an alloy of a rare earth element and a transition metal element;
• when the threshold temperature is met, applying current to a line to generate a magnetic field at the memory element, wherein the line is parallel to the word line and proximate to the memory element;
• and
• switching a magnetic state of the memory element by the combination of the reduced coercivity and the generated magnetic field.

A method of manufacturing a magnetic random access memory (MRAM) cell, the method comprising:

• forming a word line;
• forming a bit line;
• and
• forming a magnetic thin film memory element comprising only magnetic material in one or more planar magnetic layers, and located at an intersection of the word line and the bit line, wherein the magnetic layers comprise an alloy of a rare earth element and a transition metal element, wherein the word line is operable to provide a current to the memory element capable of heating the magnetic thin film memory element to a threshold temperature.

A magnetic random access memory (MRAM) cell comprising:

• a word line;
• a bit line;
• a magnetic thin film memory element comprising only magnetic material in one or more planar magnetic layers, and located at an intersection of the word line and the bit line, wherein the word line is operable to apply a current to the magnetic thin film memory element and thereby reduce coercivity of the memory element to a predetermined threshold;
• a write line parallel to the word line and proximate to the memory element, wherein the reduced coercivity in combination with a magnetic field from current passing through the write line is sufficient to switch the magnetic state of the magnetic thin film memory element.