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US 7,466,537 B2Granted
Capacitor and its manufacturing method
AssigneeSeiko Epson Corporation
InventorMasao Nakayama
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a capacitor includes the steps of: forming a lanthanum nickelate layer above a base substrate; forming a dielectric layer above the lanthanum nickelate layer; forming a conductive layer above the dielectric layer; and patterning at least the dielectric layer until the lanthanum nickelate layer is exposed.
Claims9
A method for manufacturing a capacitor, comprising:
- forming a first lanthanum nickelate layer above a base substrate;
- forming a dielectric layer above the first lanthanum nickelate layer;
- forming a conductive layer above the dielectric layer;
- forming a second lanthanum nickelate layer above the conductive layer;
- patterning at least the dielectric layer until the first lanthanum nickelate layer is exposed;
- partially removing a portion of the second lanthanum nickelate layer;
- and
- forming a wiring at the removed portion of the second lanthanum nickelate layer so that the wiring contacts the conductive layer.
5 more elements
A capacitor comprising:
- a base substrate;
- a first lanthanum nickelate layer formed above the base substrate;
- a dielectric layer formed above the first lanthanum nickelate layer;
- a conductive layer formed above the dielectric layer;
- a second lanthanum nickelate layer formed above the conductive layer;
- a wiring contacting the conductive layer through an opening in the second lanthanum nickelate layer;
- and
- a silicon oxide layer that is in contact with at least the first lanthanum nickelate layer.
5 more elements
Dependencies are inferred from the claim text.