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AssigneeASML Netherlands B.V.
InventorsJozef Maria Finders, Mircea Dusa, Richard Johannes Franciscus Van Haren, Luis Alberto Colina Santamaria Colina, Eric Henri Jan Hendrickx, Geert Vandenberghe, Alexander Hendrikus Martinus Van Der Hoff
Estimating the term…
A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.
A method for determining a positional relationship between a first structure exposed in a first layer of material on a substrate using a lithographic apparatus and a second structure exposed in a second layer of material on the substrate different than the first layer using the lithographic apparatus, the method comprising:
Dependencies are inferred from the claim text.