Technique for diagnosing and screening optical interconnect light sources
AssigneeSun Microsystems, Inc.
InventorsDan Vacar, David K. McElfresh, Leoncio D. Lopez, Robert Melanson
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Abstract
A method for testing a substrate by using a photoemission microscope is provided which includes providing the substrate and applying a reverse bias voltage to the substrate. The method further includes detecting light emissions from a top surface of the substrate and characterizing viability of the substrate from the detection of the light emissions.
Claims24
A method for testing a substrate by using a photoemission microscope comprising:
- providing the substrate having an active region defined for generating light;
- applying a reverse bias voltage to the substrate;
- detecting light emissions from the active region of the substrate, the detected light emissions being generated only by defects in the active region of the substrate;
- detecting a level of brightness of the light emissions generated by the application of the reverse bias voltage at the active region of the substrate, the detection of the level of brightness of the light emissions including detecting a region of brightness of the substrate;
- and
- characterizing viability of the substrate from the detection of the level of brightness of the light emissions and the region of brightness of the substrate, such that a number of the defects, as detected from the level of brightness of the light emissions caused by only the reverse bias voltage, are indicative of the viability of the substrate.
A computer readable media with program instructions for testing a substrate by using a photoemission microscope, the computer readable media comprising:
- program instructions for applying a reverse bias voltage to the substrate having an active region defined for generating light;
- program instructions for detecting light emissions from the active region of the substrate, the detected light emissions being generated only by defects in the active region of the substrate;
- program instructions for detecting a level of brightness of the light emissions generated by the application of the reverse bias voltage at the active region of the substrate, the detection of the level of brightness of the light emissions including detecting a region of brightness of the substrate;
- and
- program instructions for characterizing viability of the substrate from the detection of the level of brightness of the light emissions and the region of brightness of the substrate, such that a number of the defects, as detected from the level of brightness of the light emissions caused by only the reverse bias voltage, are indicative of the viability of the substrate.
A method for testing a vertical cavity surface emitting laser (VCSEL) by using a photoemission microscope comprising:
- providing the VCSEL having an active region defined for generating light;
- applying a reverse bias voltage to the VCSEL, the applying the reverse voltage including injecting charge carriers into a junction region of the VCSEL;
- detecting light emissions from the active region of the VCSEL, the detected light emissions being generated only by defects in the active region of the VCSEL;
- detecting a level of brightness of the light emissions generated by the application of the reverse bias voltage at the active region of the substrate, the detection of the level of brightness of the light emissions including detecting a region of brightness of the substrate;
- and
- determining dark line defect dislocations from the detected level of brightness of the light emissions and the region of brightness of the substrate, such that a number of the defect dislocations, as detected from the region of brightness of the substrate and the level of brightness of the light emissions caused by only the reverse bias voltage, are indicative of a viability of the VCSEL.
Dependencies are inferred from the claim text.