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US 7,466,212 B2Granted
Semiconductor filter structure and method of manufacture
AssigneeSemiconductor Components Industries, L L C
InventorsSudhama Shastri, Ryan Hurley, Yenting Wen, Emily M. Linehan, Mark A. Thomas, Earl D. Fuchs
Life of this patent
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Abstract
In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.
Claims27
A filter structure comprising:
- a semiconductor region of a first conductivity type and having a first major surface, wherein the semiconductor region comprises a semiconductor substrate having a first dopant concentration, and a semiconductor layer of the first conductivity type formed overlying the semiconductor substrate and having a second dopant concentration less than the first dopant concentration;
- a first floating capacitor device formed adjacent the first major surface;
- and
- a first transient voltage suppression device formed adjacent the first major surface, wherein the first floating capacitor device and the first transient voltage suppression device share a first doped region of a second conductivity type formed in the semiconductor region, and wherein the first doped region terminates at the first major surface so that the first floating capacitor device overlies a portion of the semiconductor region and a portion of the first doped region.
1 more element
A semiconductor filter structure comprising:
- a semiconductor substrate of a first conductivity type and having a first major surface and a first dopant concentration;
- a semiconductor layer of the first conductivity type formed overlying the first major surface, wherein the semiconductor layer has a second dopant concentration less than the first dopant concentration;
- and
- a first doped region of a second conductivity type opposite the first conductivity type formed in the semiconductor layer, wherein the first doped region is configured to form a TVS device with the semiconductor layer, and wherein the first doped region is further configured to form one plate of a floating MOS capacitor.
1 more element
A method for forming a semiconductor filter structure comprising the steps of:
- providing a semiconductor substrate of a first conductivity type and having a first major surface and a semiconductor layer of the first conductivity type formed overlying the first major surface;
- and
- forming a first doped region in the semiconductor substrate having a second conductivity type, wherein the first doped region comprises a split well region, and wherein the first doped region is configured to form a TVS device with the semiconductor, and wherein the first doped region is further configured to form one plate of a floating MOS capacitor.
Dependencies are inferred from the claim text.