Incident light angle detector for light sensitive integrated circuit

The device of claim1, wherein:

• the second mask layer includes two respective second-layer holes, the two respective second-layer holes providing inputs for the first interlayer optical path and a second interlayer optical path, each interlayer optical path formed in combination with the first-layer hole;
• the first photodetector is configured to have dimensions arranged relative to the second interlayer optical path such that any incident radiation light rays that are at the most extreme angles that may pass through both the first layer hole and the respective second layer hole of the second interlayer optical path fall within the active area of the first photodetector;
• each of the first and second interlayer optical paths transmit radiation to the first photodetector;
• the first interlayer optical path defines a first nominal peak signal direction comprising a first angle of incidence component and a first azimuthal angle component and the second interlayer optical path defines a second nominal peak signal direction comprising a second angle of incidence component and a second azimuthal angle component;
• the first interlayer optical path is configured such that, for a first range of illumination directions that includes the first nominal peak signal direction, the amount of radiation received by the first photodetector is a maximum when the illumination direction approximately coincides with the first nominal peak signal direction and the amount of radiation received by the first photodetector through the first interlayer optical path decreases as a function of increasing deviation between the illumination direction, and the first nominal peak signal direction throughout the first range when the illumination direction is within the first range of illumination directions;
• and
• the second interlayer optical path is configured such that, for a second range of illumination directions that includes the second nominal peak signal direction, the amount of radiation received by the first photodetector is a maximum when time illumination direction approximately coincides with the second nominal peak signal direction, and the amount of radiation received by the first photodetector through the second interlayer optical path decreases as a function of increasing deviation between the illumination direction and the second nominal peak signal direction throughout the second range when the illumination direction is within the second range of illumination directions, such that the first signal output by the first photodetector varies throughout the first and second ranges as a function of the illumination direction of the incident radiation falling on the device.

A method of fabricating at least a first instance of an illumination direction sensing detector configuration on a photosensitive device, the method comprising:

• fabricating the illumination direction sensing detector configuration such that it provides a signal that varies as a function of an illumination direction relative to the device of incident radiation falling on the device, the fabricating of the illumination direction sensing detector configuration comprising:
• fabricating a first photodetector on a photodetector substrate, the first photodetector being operable to output a first signal that varies depending on an amount of radiation it receives;
• fabricating a first mask layer fixed proximate to a surface of the first photodetector, the first mask layer being processed to include a first-layer hole that is arranged to receive radiation along an interlayer optical path and transmit radiation to the first photodetector;
• and
• fabricating a second mask layer fixed proximate to a surface of the first mask layer, the second mask layer being processed to include a second-layer hole that is arranged to receive the incident radiation along its illumination direction relative to the device and transmit the incident radiation to the first-layer hole along the interlayer optical path;
• wherein:
• the second-layer hole that transmits the incident radiation to the first-layer hole along the interlayer optical path defines an input of the interlayer optical path, the second-layer hole having an input area;
• the first-layer hole that receives radiation along the interlayer optical path and transmits the radiation to the first photodetector defines an output of the interlayer optical path, the first layer hole having an output area;
• fabricating the first photodetector comprises configuring the first photodetector to have dimensions arranged relative to the interlayer optical path such that any incident radiation light rays that are at the most extreme angles that may pass through both the first layer hole and the second layer hole and along the interlayer optical path fall within the active area of the first photodetector;
• and
• fabricating the illumination direction sensing detector further comprises configuring the interlayer optical path to define a nominal peak signal direction, and configuring the interlayer optical path such that, for a first range of illumination directions that includes the nominal peak signal direction, the amount of radiation received by the first photodetector through the interlayer optical path is a maximum when the illumination direction approximately coincides with the nominal peak signal direction and the amount of radiation received by the first photodetector through the interlayer optical path decreases as a function of increasing deviation between the illumination direction and the nominal peak signal direction throughout the first range, such that the first signal output by the first photodetector varies throughout the first range as a function of the illumination direction of the incident radiation falling on the device.