Semiconductor device and fabrication method thereof
AssigneeDongbu Electronics Co., Ltd.
InventorHyung Sun Yun
Life of this patent
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Abstract
In order to diversify a current control method of a semiconductor device, improve performance (including a current drive performance) of the semiconductor device, and reduce a size of the semiconductor device, a second gate may be formed inside a substrate that forms a channel upon applying a bias voltage thereto. In one aspect, the semiconductor device includes: a well region of a first conductivity; source and drain regions of a second conductivity in the well region; a first gate on an oxide layer above the well region, controlling a first channel region of a second conductivity between the source region and the drain region; and a second gate under the first channel region.
Claims12
A semiconductor device comprising:
- a well region having a first conductivity;
- a source region having a second conductivity in the well region;
- a drain region having a second conductivity in the well region;
- a first gate on an oxide layer above the well region, controlling a first channel region having a second conductivity between the source region and the drain region;
- and
- a second gate under the first channel region.
A semiconductor device comprising:
- a substrate;
- a well region in the substrate;
- a source region at a surface of the substrate;
- a drain region [on the opposite side of the source region centering around the well region];
- an oxide layer above the well region;
- a first gate on the oxide layer, controlling formation of first channel regions of a second conductivity between the source region and the drain region;
- a first power source for applying a first power to the first gate;
- a second gate under the first channel region, controlling formation of a second channel region between the first channel regions;
- and
- a second power source for applying an external power to the gate.
Dependencies are inferred from the claim text.