Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
AssigneeCree, Inc.
InventorsRichard Peter Smith, Scott T. Sheppard, Adam William Saxler, Yifeng Wu
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Abstract
Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about 140° C. for at least about 10 hours.
Claims42
A Group III Nitride based field effect transistor (FET) having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs)) of from about −8 to about −14 volts and a temperature of about 140° C. for at least about 10 hours.
A Group III Nitride based field effect transistor (FET) capable of withstanding high temperature, reverse bias test conditions of a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs)) of from about −8 to about −14 volts and a temperature of about 140° C. for at least about 10 hours.
A high electron mobility transistor (HEMT) having a power degradation of less than about 3.0 dB and a power density of greater than about 3.0 W/mm when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs)) of from about −8 to about −14 volts and a temperature of about 140° C. for at least about 10 hours.
Dependencies are inferred from the claim text.