Film formation method and manufacturing method of semiconductor device

A film formation method comprising the steps of:

• forming a first film on an electrode provided in a chamber by a CVD method using a first gas;
• installing a substrate into the chamber after forming the first film;
• and
• forming a silicon nitride film over a surface of the substrate by a sputtering method using the first film as a target and a second gas in the chamber.

A method for manufacturing a semiconductor device comprising:

• forming a thin film transistor over a substrate, wherein the thin film transistor comprises an active region and a gate electrode with a gate insulating film interposed therebetween;
• forming a first film on an electrode provided in a chamber by a CVD method using a first gas;
• installing the substrate into the chamber after forming the first film;
• and
• forming a second film over the thin film transistor by a sputtering method using the first film as a target and a second gas in the chamber.

A method for manufacturing a semiconductor device comprising:

• forming a thin film transistor over a substrate, wherein the thin film transistor comprises an active region and a gate electrode with a gate insulating film interposed therebetween;
• forming a first film on an electrode provided in a chamber by a CVD method using a first gas;
• installing the substrate into the chamber after forming the first film;
• and
• forming a silicon nitride film over the thin film transistor by a sputtering method using the first film as a target and a second gas in the chamber.

A film formation method comprising the steps of:

• forming a first film on an electrode provided in a chamber by a CVD method using a first gas;
• installing a substrate into the chamber after forming the first film;
• and
• forming a silicon nitride film over a surface of the substrate by a sputtering method using the first film as a target and a second gas in the chamber.

A method for manufacturing a semiconductor device comprising:

• forming a thin film transistor over a substrate, wherein the thin film transistor comprises an active region and a gate electrode with a gate insulating film interposed therebetween;
• forming a first film on an electrode provided in a chamber by a CVD method using a first gas;
• installing the substrate into the chamber after forming the first film;
• and
• forming a second film over the thin film transistor by a sputtering method using the first film as a target and a second gas in the chamber.