Thin film transistor, semiconductor device, and method for manufacturing the same

A transistor comprising:

• a plurality of first semiconductor islands;
• a plurality of second semiconductor islands;
• an insulating film;
• and
• a gate electrode having a first layer and a second layer,
• wherein each of the first semiconductor islands comprises a first source region, a first drain region, a first channel region between the first source region and the first drain region,
• wherein each of the second semiconductor islands comprises a second source region, a second drain region, a second channel region between the second source region and the second drain region,
• wherein each of the first source regions of the plurality of first semiconductor islands and each of the second source regions of the plurality of second semiconductor islands are electrically connected to each other,
• wherein each of the first drain regions of the plurality of first semiconductor islands and each of the second drain regions of the plurality of second semiconductor islands are electrically connected to each other,
• wherein a first current flow direction through the first channel regions of the respective first semiconductor islands is opposite to a second current flow direction through the second channel regions of the respective second semiconductor islands.