Thin-film transistor and method of fabricating same
AssigneePanasonic Corporation
InventorsTakayuki Takeuchi, Norishige Nanai
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Abstract
A thin film transistor of the present invention is a thin film transistor (100) having a semiconductor layer (14), a source region (15) and a drain region (16) provided to be isolated from each other so as to mutually oppose the semiconductor layer. The semiconductor layer has π-conjugated organic semiconductor molecules as its main component. The π-conjugated organic semiconductor molecules are oriented so that π orbitals substantially oppose each other and that the molecular axis of the main chains is oriented to be inclined with respect to a direction of electric field in a channel formed in the semiconductor layer.
Claims12
A thin film transistor comprising:
- a semiconductor layer;
- and a source region and a drain region provided to be isolated from each other so as to mutually oppose the semiconductor layer, wherein
- the semiconductor layer has π-conjugated organic semiconductor molecules as its main component;
- and
- the π-conjugated organic semiconductor molecules are oriented so that π orbitals thereof substantially oppose each other and that a molecular axis of main chains thereof is oriented to be oblique with respect to a direction of electric field in a channel formed in the semiconductor layer.
Dependencies are inferred from the claim text.