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US 7,465,656 B2Granted
Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorMasaki Tamaru
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a conductive pattern formed on a substrate, a conductive land formed to come into contact with at least part of the top surface of the conductive pattern, and a conductive section formed on the conductive land. The conductive section is electrically connected through the conductive land to the conductive pattern.
Claims6
A semiconductor device comprising:
- a first gate electrode formed on a substrate;
- a conductive land formed to come into contact with at least part of the top surface of the first gate electrode;
- and
- a contact formed on the conductive land, the contact being electrically connected through the conductive land to the first gate electrode,
- wherein the conductive land extends over the top surface of the first gate electrode and an area around said top surface and has a larger area than the contact when viewed in plan.
2 more elements
Dependencies are inferred from the claim text.