Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device

A method of manufacturing a thin film integrated circuit device comprising:

• forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;
• forming a groove in a boundary between the plurality of thin film integrated circuit devices;
• temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices;
• separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices;
• and
• removing the jig bonded to the plurality of thin film integrated circuit devices.

A method of manufacturing a thin film integrated circuit device comprising:

• forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;
• forming a groove in a boundary region between the plurality of thin film integrated circuit devices;
• thinning the lower single-crystal silicon layer by polishing;
• separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices.

A method of manufacturing a thin film integrated circuit device comprising:

• forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;
• forming a groove in a boundary between the plurality of thin film integrated circuit devices;
• temporarily bonding a jig to upper portions of the plurality of thin film integrated circuit devices;
• thinning the lower single-crystal silicon layer by polishing;
• separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices;
• and
• removing the jig bonded to the plurality of thin film integrated circuit devices.

A method of manufacturing a non-contact type thin film integrated circuit device comprising:

• forming a plurality of thin film integrated circuit devices on a SOI substrate including an upper single-crystal silicon layer, a layer including one of silicon oxide and silicon nitride, and a lower single-crystal silicon layer;
• forming a groove between the plurality of thin film integrated circuit devices;
• separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to etch at least a surface of the lower single-crystal silicon layer near the thin film integrated circuit devices;
• and
• forming an antenna around the separated thin film integrated circuit device.