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US 7,465,645 B2Granted
Method of detaching a layer from a wafer using a localized starting area
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsWalter Schwarzenbach, Christophe Maleville, Nadia Ben Mohamed
Life of this patent
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Abstract
A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.
Claims16
A method of detaching a layer from a wafer, which comprises:
- creating a weakened zone in a wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region, wherein the super-weakened region is created by implanting an overdose of the atomic species compared to the dose of atomic species implanted in the main region;
- and
- initiating detachment of the layer from the remainder portion at the super-weakened region by applying a controlled detachment force obtained by heating at least the weakened zone wherein the heat is applied substantially evenly over substantially the entire weakened zone, and wherein the heating is controlled for evening the heating applied to weakened zone such that the detachment initiates and propagates from the super-weakened region through the main region to detach the layer from the remainder portion;
- and wherein the detachment force is applied to both the super-weakened region and the main region.
1 more element
A method of detaching a layer from a wafer, which comprises:
- creating a weakened zone in a wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region, wherein the super-weakened region is created by implanting an overdose of the atomic species compared to the dose of atomic species implanted in the main region;
- and
- initiating detachment of the layer from the remainder portion at the super-weakened region to impart a controlled detachment force obtained by applying heat substantially evenly over substantially the entire weakened zone, and wherein the heating is controlled for evening the heating applied to the weakened zone such that the detachment initiates and propagates from the super-weakened region through the main region to detach the layer from the remainder portion,
- wherein the heat is applied by heating elements that are independently controlled for evening the application of heat to the weakened zone;
- and wherein the detachment force is applied to both the super-weakened region and the main region.
2 more elements
A method of detaching a layer from a wafer, which comprises:
- creating an weakened zone in a wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region, wherein the super-weakened region is created by implanting an overdose of the atomic species compared to the dose of atomic species implanted in the main region;
- and
- initiating detachment of the layer from the remainder portion at the super-weakened region by applying heat a controlled detachment force obtained by heating at least the weakened zone wherein the heat is applied substantially evenly over substantially the entire weakened zone, and wherein the heating is controlled for evening the heating applied to the weakened zone such that the detachment initiates and propagates from the super-weakened region through the main region to detach the layer from the remainder portion,
- wherein the detachment force is applied to both the super-weakened region and the main region to obtain a detached layer that is substantially homogenous and has a low surface roughness and improved homogeneity compared to the surface roughness and homogeneity obtained from a conventional detachment annealing on a wafer having a weakened zone but not a super-weakened region.
1 more element
Dependencies are inferred from the claim text.