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US 7,465,643 B2Granted
Semiconductor device with fixed channel ions
AssigneeHynix Semiconductor Inc.
InventorDae Young Kim
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes subjecting a semiconductor substrate to thermal treatment at a temperature ranging from 770 to 830° C. to fix channel ions then forming a HTO film. The method thereby prevents a threshold voltage of a gate from changing due to diffusion of channel ions.
Claims16
A method for manufacturing a semiconductor device, the method comprising:
- performing an channel-ion-implanting process on a semiconductor substrate having a device isolation film;
- subjecting the semiconductor substrate to thermal treatment at a temperature ranging from about 770° C. to about 830° C. to fix the channel ions;
- reducing the temperature of the semiconductor substrate to form a HTO (Hot Temperature Oxide) film and an anti-reflection film over the semiconductor substrate;
- partially etching the HTO film and the anti-reflection film to expose a predetermined portion of the semiconductor substrate;
- and
- etching the exposed semiconductor substrate to form a recess region and removing the HTO film and the anti-reflection film to form a gate over the recess portion.
3 more elements
A method for manufacturing a semiconductor device, the method comprising:
- performing an channel-ion-implanting process on a semiconductor substrate having a device isolation film;
- performing a high-temperature-deposition process at a temperature ranging from 770 to 830° C. to form a HTO film over the semiconductor substrate;
- forming an anti-reflection film over the HTO film;
- partially etching the HTO film and the anti-reflection film to expose a predetermined portion of the semiconductor substrate;
- and
- etching the exposed semiconductor substrate to form a recess portion and removing the HTO film and the anti-reflection film to form a gate over the recess portion.
3 more elements
Dependencies are inferred from the claim text.