Method for manufacturing a gate sidewall spacer using an energy beam treatment

A method for manufacturing an integrated circuit, comprising:

• forming an isolation structure within a semiconductor substrate;
• subjecting at least a portion of the isolation structure to a first energy beam treatment, the first energy beam treatment configured to change a stress of the at least a portion of the isolation structure within the semiconductor substrate, and thus change a stress in the substrate;
• forming gate structures over the semiconductor substrate;
• forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structures;
• after performing the first energy beam treatment, subjecting the at least a portion of the gate sidewall spacers to a second energy beam treatment, the second energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow;
• forming a pre-metal dielectric layer over the isolation structure and over the gate structure;
• after performing the second energy beam treatment, subjecting at least a portion of the pre-metal dielectric to a third energy beam treatment, the third energy beam treatment configured to change a stress of the at least a portion of the pre-metal dielectric layer, and thus change a stress in the substrate;
• and
• forming interconnects within dielectric layers located over the gate structures and within the pre-metal dielectric layer, the interconnects configured to contact the gate structures.

A semiconductor device, comprising:

• a semiconductor substrate;
• isolation structures within the semiconductor substrate, at least a portion of each isolation structure subjected to a first energy beam treatment to impart a stress to the substrate at a location between isolation structures;
• a gate structure located over the substrate;
• sidewall spacers located proximate a sidewall of the gate structure, at least a portion of the sidewall spacers subjected to a second energy beam treatment to impart a stress in the substrate therebelow;
• and
• a pre-metal dielectric layer over the isolation structures and over the gate structure, at least a portion of the pre-metal dielectric layer subjected to a third energy beam treatment to impart a stress in the substrate.